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Features
* * * * * * *
Excellent Power Added Efficiency 1xRTT Compatible Industry Standard Digital Quiescent Current State Control Analog Continuous Bias Capability CMOS-compatible Logic Inputs High ACP and ALT Excellent RX Band Noise Performance
Benefits
* * * *
Extended Battery Operating Time Very Small 10 Pin 4 mm x 4 mm Package Few External Components Fully ESD Protected
Applications
* Cell Band CDMA IS-95/98 Based Mobile Phones * Single-mode, Dual-mode and Tri-mode CDMA Phones
3-V CDMA/AMPS Power Amplifier Module 4 mm x 4 mm for Cell Band T0372
Description
The T0372 is a 4 mm 4 mm 3-V CDMA/AMPS cell-band power amplifier module designed for use in mobile phones. Its extremely small 4 mm 4 mm package makes it ideal for today's very small data enable phones. The module supports the IS-95 and IS-98 standards and is also 1xRTT compliant. The T0372 provides excellent RF performance with low current consumption resulting in longer talk times in portable applications. The module has a small 4 mm 4 mm footprint, which facilitates its use in the next generation of small, lightweight handsets and other wireless applications. The heart of the module is a two-stage power amplifier manufactured in Atmel's SiGe technology. The T0372 provides the capability to be operated digitally (one or two bias states), or in a continuous quiescent current mode. In two-state quiescent current mode operation, the T0372 is controlled by the baseband processor using a CMOScompatible ICQ control voltage. Overall current consumption of the device is minimized by selecting the lowest ICQ state available for each power output level. The module is 50-W matched on the input and output, allowing the device to be used with minimal external circuitry.
Preliminary (Summary)
Rev. 4541AS-CDMA-08/02
1
Figure 1. Block Diagram
VCC1
GND
VCC2
5 4
6 8
RFIN
Match
Match
RFOUT
Bias & Control
1
VREF
2
VCTRL
Pin Configuration
Figure 2. Pinning
VREF VCTRL GND RFIN VCC1
1 2 3 4 5 10 9 8 7 6
GND GND RFOUT GND VCC2
Pin Description
Pin 1 2 3 4 5 6 7 8 9 10 Symbol VREF VCTRL GND RFIN VCC1 VCC2 GND RFOUT GND GND Paddle Function Regulated supply for setting bias, reference voltage input CMOS-compatible logic level used to set bias Ground recommended RF input, the RF circuit is DC-grounded internally, 50-W RF impedance Collector supply for input stage Collector supply for output stage Ground recommended RF output, the RF circuit is DC-blocked internally, 50-W RF impedance Ground recommended Ground recommended Device ground and heat sink, requires good thermal path
2
T0372
4541AS-CDMA-08/02
T0372
Absolute Maximum Ratings
Parameters Supply voltages, no RF applied Supply voltages, RF applied Bias reference voltages and bias control voltages (Pins 3 and 4 respectively) Power dissipation Case temperature, survival Storage temperature DC-grounded RF input DC-blocked RF output Note: Symbol VCC1, VCC2 VCC1, VCC2 VREF, VCTRL PDISS TC Tstg RFIN RFOUT Value -0.5 to +6.0 -0.5 to +5.0 -0.5 to +5.0 2.5 -40 to +100 -40 to +150 0 to 0 -20 to +20 Unit VDC VDC VDC W C C VDC VDC
The part may not survive all maximum ratings applied simultaneously.
Thermal Resistance
Parameters Junction ambient Symbol RthJA Value TBD Unit K/W
Electrical Characteristics
Test conditions: VCC1, CC2 = 3.4 VDC, VREF = 2.85 VDC, VCTRL = 0.5 VDC, RF = 836 MHz, Tc = 25C, Pout = 28 dBm, Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No. Parameters Frequency Output power Large signal gain Pout = 28 dBm, VCTRL = low Pout = 16 dBm, VCTRL = high Gain variation versus temperature Quiescent current (high-gain mode) Quiescent current (low-gain mode) Current consumption Output power (low) -30C to +85C VCTRL = low VCTRL = high Pout = 28 dBm, VCTRL = low ACPR = -49 dBc, IS-95/98 standard, VCTRL = high Pout = 28 dBm VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low 8 Test Conditions Pin 4, 8 8 4, 8 4, 8 4, 8 1, 5, 6 1, 5, 6 1, 5, 6 ICQ-hi ICQ-low Icc Pout PAE 33 Symbol fo Pout Ghigh Glow 26.0 25.0 Min. 824 Typ. 836 28 29.0 28.0 1.4 110 60 503 Max. 849 Unit MHz dBm dB dB dB mA mA mA Type* A; D A A A C A A A
8
16
dBm
B
Power added efficiency Adjacent channel power
36
%
A
ACP
-49
-44
dBc
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
3
4541AS-CDMA-08/02
Electrical Characteristics (Continued)
Test conditions: VCC1, CC2 = 3.4 VDC, VREF = 2.85 VDC, VCTRL = 0.5 VDC, RF = 836 MHz, Tc = 25C, Pout = 28 dBm, Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No. Parameters Alternate channel power Noise power in Rx band RF input return loss Second harmonic Test Conditions Pout = 28 dBm, IS-95/98 standard, VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low Pout = 28 dBm, VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low For 1 or 2 bias state operation VCTRL = low VCTRL = high Leakage current Logic current Control voltage Ruggedness VCTRL = high; VREF = 0 VDC At VCTRL High Low No damage, POUT = 28 dBm, IS-95/98 standard, VCC1, CC2 = high No oscillations, POUT = 28 dBm, IS-95/98 standard, VCC1, CC2 = high Pin 8 Symbol ALT Min. Typ. -57 Max. -55 Unit dBc Type* A
8
-94
dBm/ 30 kHz dB
C
4
S11 2fo
11.5
A
8
-35
dBc
A
Third harmonic
8 5, 6 1 1 1 5, 6 2 2
3fo VCC VREF IB_high IB_low 3.1 2.8
-45 3.4 2.85 10 5 10 4.2 3.0
dBc VDC VDC mA mA A 100 4.5 0.5 A VDC VDC
A D D A A A A D
Supply voltage Reference voltage Reference current
ICTRL VCTRL 1.7 0
49 2.0 0.25
8
10:1
C
Stability
8
10:1
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
T0372
4541AS-CDMA-08/02
T0372
Electrical Characteristics (AMPS Mode)
Test conditions: VCC1, CC2 = 3.4 VDC, VREF = 2.85 VDC, VCTRL = 0.5 VDC, RF = 836 MHz, Tc = 25C, Pout = 31.5 dBm, Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No. Parameters Frequency Output power Large signal gain Power added efficiency Noise power in Rx band RF input return loss Second harmonic Third harmonic Current consumption Saturated, PIN = 3.5 dBm Pout = 31.5 dBm Pout = 31.5 dBm Pout = 31.5 dBm All operating Pout and VCC Pout = 31.5 dBm Pout = 31.5 dBm Pout = 31.5 dBm 8 4 8 8 1, 5, 6 S11 2fo 3fo ICC Test Conditions Pin 4, 8 8 4, 8 Symbol fo Pout ICQ-hi PAE 24.5 47 Min. 824 Typ. 836 31.5 27.0 51 -93 11.5 -32.5 -42.5 783 Max. 849 Unit MHz dBm dB % dBm/ 30 kHz dB dBc dBc mA Type* A, D A A A C A A A A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
4541AS-CDMA-08/02
Ordering Information
Extended Type Number T0372 Package 4 mm 4 mm module package Remarks -
Package Information
PIN 1 2 3 4 5 TOP VIEW
10 9 8 7 6
MOLD SUBSTRATE
SIDE VIEW
5 4 3 2 1
6 7 8 9 10
BOTTOM VIEW
6
T0372
4541AS-CDMA-08/02
T0372
Designation A A1 A2 D E J M P T S R Q e e1 Description Overall height Substrate thickness Mold thickness Package length Package width Terminal solder mask opening length and width (for all terminals) Distance between metal pad and solder mask Distance between metal pad and package edge GND solder mask opening width GND solder mask opening length Distance between GND solder mask opening and package edge Distance between GND solder mask opening and package edge Terminal pitch for terminals 1-10, 2-9, 3-8, 4-7 and 5-6 Terminal pitch for terminals 1-2-3-4-5 and 6-7-8-9-10 Dimensions 1.06 0.09 mm 0.38 0.05 mm 0.68 0.05 mm 4.0 0.1 mm 4.0 0.1 mm 0.575 0.075 mm 0.075 0.05 mm 0.10 0.025 mm 2.00 0.05 mm 3.80 0.05 mm 0.10 0.01 mm 1.00 0.01 mm 3.400 mm 0.850 mm
For full data sheet, please contact MarketingNews@hno.atmel.com
7
4541AS-CDMA-08/02
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4541AS-CDMA-08/02 xM

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